PBHV8115T,215

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PBHV8115T,215 datasheet

• Маркировка
  PBHV8115T,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBHV8115T,215 Collector- Emitter Voltage Vceo Max: 150 V Configuration: Single Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500mA, 10V Emitter- Base Voltage Vebo: 6 V Frequency - Transition: 30MHz ID_COMPONENTS: 1949826 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 1 A Maximum Operating Frequency: 30 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 300mW Power Dissipation: 300 mW Series: - Transistor Polarity: NPN Transistor Type: NPN Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 1A Voltage - Collector Emitter Breakdown (max): 150V Other Names: 934061416215, PBHV8115T T/R
• Количество страниц
  12 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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